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Domain Informations
Finfets.com lookup results from whois.godaddy.com server:
- Domain created: 2013-05-09T18:04:03Z
- Domain updated: 2023-08-18T00:12:19Z
- Domain expires: 2025-05-09T18:04:03Z 0 Years, 297 Days left
- Website age: 11 Years, 68 Days
- Registrar Domain ID: 1800129011_DOMAIN_COM-VRSN
- Registrar Url: http://www.godaddy.com
- Registrar WHOIS Server: whois.godaddy.com
- Registrar Abuse Contact Email: [email protected]
- Registrar Abuse Contact Phone: 480-624-2505
- Name server:
- ANNA.NS.CLOUDFLARE.COM
- TODD.NS.CLOUDFLARE.COM
Network
- inetnum : 104.16.0.0 - 104.31.255.255
- name : CLOUDFLARENET
- handle : NET-104-16-0-0-1
- status : Direct Allocation
- created : 2010-07-09
- changed : 2021-07-01
- desc : All Cloudflare abuse reporting can be done via https://www.cloudflare.com/abuse
Owner
- organization : Cloudflare, Inc.
- handle : CLOUD14
- address : Array,San Francisco,CA,94107,US
Abuse
- handle : ABUSE2916-ARIN
- name : Abuse
- phone : +1-650-319-8930
- email : [email protected]
Technical support
- handle : ADMIN2521-ARIN
- name : Admin
- phone : +1-650-319-8930
- email : [email protected]
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Host Informations
| Host name | 104.21.29.6 |
| IP address | 104.21.29.6 |
| Location | United States |
| Latitude | 37.751 |
| Longitude | -97.822 |
| Timezone | America/Chicago |
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FinFETs - Tech Design Forum
FinFETs have key advantages over planar bulk devices. They exhibit more drive current per unit area than planar devices, largely because the height of the fin can be used to create a channel …
Techdesignforums.comDA: 24 PA: 25 MOZ Rank: 49
FinFET-1 - signoffsemiconductors
FinFETs are non-planar transistors built on SOI or Bulk substrate. FinFET describes any fin-based, multi-gate transistor architecture, regardless of the number of gates. The term …
Signoffsemiconductors.comDA: 25 PA: 10 MOZ Rank: 36
Fin field-effect transistor - Wikipedia
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region form…
En.wikipedia.orgDA: 16 PA: 33 MOZ Rank: 51
All about FINFET - Engineers Garage
The two types of FinFets have different construction. The basic layout and mode of operation are similar to that of a conventional MOSFET. The only difference is the three dimensional bar …
Engineersgarage.comDA: 23 PA: 18 MOZ Rank: 44
Applications – FinFETs | Atomera
IEEE Transactions on Electron Devices, Vol. 64, Issue 1 January, 2017. This paper, with co-authors from UC Berkeley compares the implementation of MST® technology on bulk and SOI FinFETs. It shows that …
Atomera.comDA: 11 PA: 22 MOZ Rank: 37
Introduction to FinFET - Utmel
Understanding The FinFet Semiconductor Process. FinFET is an innovative design derived from the traditional standard Field-Effect Transistor (FET). In the traditional transistor structure, the gate that controls the flow of …
Utmel.comDA: 13 PA: 50 MOZ Rank: 69
What is FinFET Technology? - Cadence Design Systems
FinFETs can also be formed with multiple fins placed in parallel, which gives larger gain with similar control over short-channel effects. This need to combat short-channel effects—where …
Resources.system-analysis.cadence.comDA: 37 PA: 39 MOZ Rank: 82
FinFET - Semiconductor Engineering
In finFETs, the traditional 2D planar gate is replaced with a silicon fin that rises up vertically from the silicon substrate. The control of current is accomplished by implementing a …
Semiengineering.comDA: 19 PA: 50 MOZ Rank: 88
Construction of a FinFET - Fundamentals - Halbleiter
Basis for a FinFET is a lightly p-doped substrate with a hard mask on top (e.g. silicon nitride) as well as a patterned resist layer. 2. Fin etch. The fins are formed in a highly anisotropic etch …
Halbleiter.orgDA: 18 PA: 42 MOZ Rank: 68
What is Finfet? - Computer Hope
FinFET, also known as Fin Field Effect Transistor, is a type of non-planar or "3D" transistor used in the design of modern processors.As in earlier, planar designs, it is built on an SOI (silicon on insulator) substrate. However, …
Computerhope.comDA: 20 PA: 20 MOZ Rank: 49
FinFET - YouTube
Driven by the growing demand for increased communication and increased mobile and server data traffic, CMOS technologies will require continuous innovations ...
Youtube.comDA: 15 PA: 6 MOZ Rank: 31
FinFET Design | DesignWare IP | Synopsys
FinFET, The Device: An IP Designer’s Device of Choice. Due to its many superior attributes, especially in the areas of performance, leakage power, intra-die variability, low voltage …
Synopsys.comDA: 16 PA: 50 MOZ Rank: 79
FinFETs: From Devices to Architectures - Hindawi
Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regime, FinFETs and Trigate FETs have emerged as their …
Hindawi.comDA: 15 PA: 27 MOZ Rank: 54
FinFET: A Comprehensive Understanding of It | Easybom
What are FinFETs? When it comes to FET, people who study electronics are familiar with it. FET (field-effect transistor) is a common three-port semiconductor device, and …
Easybom.comDA: 15 PA: 50 MOZ Rank: 78
Multigate device - Wikipedia
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a …
En.wikipedia.orgDA: 16 PA: 22 MOZ Rank: 52
How the Father of FinFETs Helped Save Moore’s Law
One of those ideas, raising the channel through which current flows so that it sticks out above the surface of the chip, became the FinFET, a technology that earned Hu this year's …
Spectrum.ieee.orgDA: 17 PA: 49 MOZ Rank: 81
FinFET basic funtion | What is FinFET? - RF Wireless World
• IG FinFETs have drawback of providing more space area due to two separate gate terminals. Due to its big advantages FinFET is widely used for the following applications: • Design of …
Rfwireless-world.comDA: 24 PA: 32 MOZ Rank: 72
From FinFETs to CFETs: imec’s Plan for Continued Transistor Scaling
Thanks to the transition from planar FETs to FinFETs, transistor sizes have decreased while performance has increased. This shift was necessary because the …
Allaboutcircuits.comDA: 24 PA: 50 MOZ Rank: 33
β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal …
In this work, β-Ga 2 O 3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β …
Aip.scitation.orgDA: 17 PA: 27 MOZ Rank: 62
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