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| IP address | 134.109.133.7 |
| Location | Chemnitz Germany |
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| Timezone | Europe/Berlin |
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Epigraphene | Homepage
Epitaxial graphene resembles a truly 2D electron system and is known for its ability of manifold and flexible functionalization schemes at its vacuum and interface site, e.g. by charge transfer, polarization doping, encapsulation with high-Z materials as well as formation of reconstructions and superlattices. The controlled transition from ...
Epigraphene.deDA: 18 PA: 18 MOZ Rank: 19
Epitaxial Graphene Lab
Welcome to the Epitaxial Graphene Lab! Since 2001 and the invention of graphene electronics ( GT patent 2003) the Georgia Tech epitaxial graphene research team led by Walt de Heer and its collaborators are developing the new field of epitaxial graphene, or epigraphene, electronics.
Graphene.gatech.eduDA: 19 PA: 19 MOZ Rank: 21
Epigraphene: epitaxial graphene on silicon carbide
Epigraphene : epitaxial graphene on silicon carbide Claire Berger1, 2, Edward H. Conrad1, Walt A. de Heer1 1 School of Physics –Georgia Institute of Technology, Atlanta, GA 30332, USA 2 Institut Néel, CNRS –Université Grenoble Alpes, 38042 Grenoble, France 1. Introduction and overview 1.1. Epitaxial graphene and transferred graphene
Hal.archives-ouvertes.frDA: 24 PA: 22 MOZ Rank: 48
[1910.03697] Protected transport in the epigraphene edge state
Measured epigraphene edge state (EGES) conduction is ballistic with mean free paths exceeding tens of microns, thousands of times greater than for the diffusive 2D bulk. It is essentially independent of temperature, decoupled from the bulk and substantially immune to disorder. Remarkably, EGES transport involves a non-degenerate conductance channel that is …
Arxiv.orgDA: 9 PA: 15 MOZ Rank: 27
Exceptional ballistic transport in epigraphene Walt de Heer …
Epigraphene Walt de Heer Georgia Institute of Technology . Program Objective First formulated in 2001 and patented in 2003, our objective is to develop nanoelectronics based on epitaxial graphene on silicon carbide. Sprinkle et al. Nature Nano, vol. 5, pp. 727-731,. 2010. Si crystal Si wafer SiC wafer Si nanoelectronics 200 GHz epitaxial graphene transistor (GaTech) 3 Intel …
Cmu.eduDA: 11 PA: 50 MOZ Rank: 46
Séminaire général du département de physique de l’École …
CYCLE DE CONFÉRENCES JEUDI 15 FÉVRIER 2018 17H-18H15 AMPHI. PIERRE FAURRE ÉCOLE POLYTECHNIQUE EPIGRAPHENE NANOELECTRONICS More than two decades of work on carbon nanotubes and more recently graphene have largely contributed to the idea of carbon-based electronics. A prerequisite is a scalable platform and the ability to reproducibly …
Gargantua.polytechnique.frDA: 26 PA: 34 MOZ Rank: 65
Highly efficient UV detection in a metal–semiconductor–metal …
UV detector performance of epigraphene. (a) Time response of epigraphene UV detector (device A). Rise and fall times (τ r and τ f, respectively) are extracted from fitting the time traces to a double exponent, yielding two times scales for each. (b) Noise current spectral density vs frequency. The amplifier noise (black) was measured in open ...
Aip.scitation.orgDA: 17 PA: 22 MOZ Rank: 45
Introduction to epigraphene and overview - SpringerMaterials
C. Berger, E. H. Conrad, W. A. de Heer (2018) G. Chiarotti, P. Chiaradia (ed.) SpringerMaterials Introduction to epigraphene and overview Condensed Matter 45B (Physics of Solid Surfaces)
Materials.springer.comDA: 22 PA: 37 MOZ Rank: 66
An epigraphene platform for coherent 1D nanoelectronics
Graphene2020 June 02-05, 2020 Grenoble (France) An epigraphene platform for coherent 1D nanoelectronics Claire Berger1, 2, 3 Vladimir Prudkovskiy2, 3, 4, Yiran Hu 3, Kaimin Zhang4, Yue Hu3, Peixuan Ji4, Grant Nunn , Jian Zhao4, Chenqian Shi4, Antonio Tejeda5, 6, Alessandro De Cecco2, David Wander2, Clemens Winkelmann2, Yuxuan Jiang7, Tianhao Zhao 3, Zhigang …
Phantomsfoundation.comDA: 22 PA: 50 MOZ Rank: 86
[1704.00374] Epigraphene : epitaxial graphene on silicon carbide
Title:Epigraphene : epitaxial graphene on silicon carbide. Epigraphene : epitaxial graphene on silicon carbide. Authors: Claire Berger, Edward H. Conrad, Walt A. de Heer. (Submitted on 2 Apr 2017) Abstract: This article presents a review of epitaxial graphene on silicon carbide, from fabrication to properties, put in the context of other forms ...
Arxiv.orgDA: 9 PA: 15 MOZ Rank: 33
School of Physics Public Lecture - Dr. Walt De Heer
Starting in 2000, the Georgia Tech epigraphene electronics group has taken a different approach to graphene-based nanoelectronics, by growing it on single crystals of silicon carbide, using a method that was known for more than 50 years. This form of graphene, called epigraphene, has not only shown a wide variety of important new properties, it also is intrinsically compatible …
Physics.gatech.eduDA: 18 PA: 50 MOZ Rank: 80
Flat and safe under the graphene sheet | Nature Materials
Epigraphene is known to cover continuously and seamlessly the entire SiC wafer 5. To promote metal atoms intercalation, the graphene layer was first exposed to oxygen plasma to introduce holes ...
Nature.comDA: 14 PA: 27 MOZ Rank: 52
Transport properties of epigraphene in magnetic field
Transport properties of epigraphene in magnetic field Book Title Physics of Solid Surfaces Book DOI 10.1007/978-3-662-53908-8 Chapter DOI 10.1007/978-3-662-53908-8_169 Part of Condensed Matter Volume 45B
Materials.springer.comDA: 22 PA: 37 MOZ Rank: 71
Graphene Nanoelectronics at the Edge
Epigraphene is currently the only graphene nanoelectronics platform that is at the edge of being realized. Coherent graphene nanoelectronics has become a distinct possibility. References [1] W. A, de Heer The invention of graphene electronics and the physics of epitaxial graphene on silicon carbide Phys. Scr. 014004 (2012)
Phantomsfoundation.comDA: 22 PA: 50 MOZ Rank: 95
Polymer-encapsulated molecular doped epigraphene for quantum …
Finally, an epigraphene QHR standard was successfully oper-ated at 4K and 5 T in a small cryogen-free table-top system [2]. However, one major problem that remains is exerting control over the charge carrier density, which is necessary in order to achieve proper quantization and optimal opera-tion for a chosen range of temperatures and magnetic fields. Under the …
Iopscience.iop.orgDA: 18 PA: 37 MOZ Rank: 69
Polymer-encapsulated molecular doped epigraphene for quantum …
Chemical doping of epigraphene with low p-doping for both microscopic and macroscopic Hall bar geometries (a) quantum Hall measurements performed on 30 µm wide Hall bar, as seen in figure 1(a), displays fully quantized plateaus below 1 T. (b) Optical micrograph of a macroscopic Hall bar 5 × 5 mm 2. The red dotted square outlines the epigraphene region. …
Iopscience.iop.orgDA: 18 PA: 33 MOZ Rank: 66
An epigraphene platform for coherent 1D nanoelectronics
4 Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât. 510, 91405 Orsay, France 5 Synchrotron SOLEIL, …
Researchgate.netDA: 20 PA: 50 MOZ Rank: 34
Walt A. de Heer's research works | Georgia Institute of Technology ...
Walt A. de Heer's 302 research works with 48,246 citations and 14,659 reads, including: Dissipationless zero energy epigraphene edge state for nanoelectronics
Researchgate.netDA: 20 PA: 49 MOZ Rank: 86
Protected transport in the epigraphene edge state
Measured epigraphene edge state (EGES) conduction is ballistic with mean free paths exceeding tens of microns, thousands of times greater than for the diffusive 2D bulk. It is essentially independent of temperature, decoupled from the bulk and substantially immune to disorder. Remarkably, EGES transport involves a non-degenerate conductance channel that is pinned …
Shamra-academia.comDA: 19 PA: 23 MOZ Rank: 60
An epigraphene platform for coherent 1D nanoelectronics
An epigraphene platform for coherent 1D nanoelectronics ... 4 Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, …
Researchgate.netDA: 20 PA: 50 MOZ Rank: 31
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